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| GaAs MMIC CGY 52 ________________________________________________________________________________________________________ Datasheet * Two stages monolithic microwave IC (MMICAmplifier) * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V * 50 input / output ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CGY 52 CGY52 Q68000-A8615 MW-7 Maximum ratings Drain voltage Channel temperature Storage temperature range Total power dissipation (TS < 55C) 2) 3) Symbol Unit 6 150 -55...+150 1000 V C C mW VD TCh Tstg Ptot Thermal resistance Channel-soldering point (GND) 2) Junction-ambient 4) RthChS RthJA < 95 < 175 K/W K/W 1) 2) 3) 4) Dimensions see chapter Package Outlines TS is measured on the source 2 lead at the soldering point of the pcb. Please care for sufficient heat dissipation on the pcb! Package mounted on alumina 15mm x16.7 mm x0.7 mm Siemens Aktiengesellschaft pg. 1/4 12.02.96 HL EH PD 21 GaAs MMIC Electrical characteristics CGY 52 ________________________________________________________________________________________________________ TA = 25C VD = 4.5 V RS = RL = 50 unless otherwise specified Characteristics Drain current Power Gain f = 200 MHz f = 900 MHz f = 1800 MHz Symbol min 13 14.5 12.5 - typ 160 14 15.5 13.5 3 4.8 7.5 8.5 7.5 12.5 9 10.5 10.5 12.5 11.5 max 220 4 - Unit mA dB ID G Gain flatness f = 200 MHz to 1800 MHz G dB dB dB Noise figure f = 900 MHz to 1800 MHz F Input return loss f = 200 MHz to 300 MHz f = 300 MHz to 1800 MHz f = 200 MHz f = 900 MHz f = 1800 MHz RLin 6.5 7.5 9.5 - Output return loss f = 200 MHz to 1800 MHz f = 200 MHz f = 900 MHz f = 1800 MHz RLout dB Third order input intercept point two-tone intermodulation test f1 = 806 MHz, f2 = 810 MHz P= = 10 dBm (both carriers) IP3 P-1dB - 32 19 - dBm dBm 1dB gain compression f = 200 MHz to 1800 MHz Siemens Aktiengesellschaft pg. 2/4 12.02.96 HL EH PD 21 GaAs MMIC CGY 52 ________________________________________________________________________________________________________ Typical S-Parameters VD = 4.5 V, f/GHz 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 0.63 0.36 0.30 0.26 0.24 0.22 0.23 0.26 0.31 0.37 0.40 0.43 0.43 S11 MAG ANG -36 -38 -35 -33 -29 -20 -10 0 5 5 4 2 2 4.36 5.17 5.27 5.44 5.64 5.80 5.81 5.59 5.15 4.54 3.88 3.34 2.91 S21 MAG ANG 20 -13 -32 -51 -70 -90 -112 -135 -157 -178 163 147 132 MAG 0.003 0.006 0.008 0.009 0.012 0.015 0.017 0.019 0.021 0.024 0.026 0.031 0.033 VG = 0 V, Zo = 50 S12 ANG 69.0 54.0 54.0 61.0 60.0 64.0 64.0 64.0 61.0 59.0 57.0 58.0 56.0 0.30 0.27 0.27 0.26 0.23 0.19 0.15 0.14 0.19 0.27 0.33 0.38 0.40 S22 MAG ANG -12 -17 -24 -30 -35 -36 -25 4 24 28 28 25 23 Application circuit for CGY52, f = 100 ... 1800 MHz V D 1nF V G C = 1nF * * L = 100 nH Input 50Ohm 5 100pF 2 3 40 nH 10 7 100 nH 100pF Output 50Ohm CGY52 50 Ohm Microstripline *) L, C are optional, only needed when gain control via VG is used Siemens Aktiengesellschaft pg. 3/4 12.02.96 HL EH PD 21 GaAs MMIC Total Power Dissipation Ptot = f ( TS; TA ) CGY 52 ________________________________________________________________________________________________________ 1.0 P tot [ W ] 0.8 0.6 TS 0.4 TA 0.2 0 0 50 100 150 TA ; TS [ C ] Terminal identification: 1 2 3 4 5 6 7 n.c. Interstage IN n.c. GND (1) GND (2) OUT Siemens Aktiengesellschaft pg. 4/4 12.02.96 HL EH PD 21 |
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